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KBE00F005A-D411 - 512Mb NAND*2 256Mb Mobile SDRAM*2

KBE00F005A-D411_2828794.PDF Datasheet
 Full text search : 512Mb NAND*2 256Mb Mobile SDRAM*2

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PART Description Maker
KBE00F005A-D411 KBE00F005A 512Mb NAND*2 256Mb Mobile SDRAM*2
 SAMSUNG[Samsung semiconductor]
KBE00S003M-D411 KBE00S003M 1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
 SAMSUNG[Samsung semiconductor]
K5D5657ACM-F015 MCP / 256Mb NAND and 256Mb Mobile SDRAM
 Samsung Electronics
HB54A2569F1 HB54A2569F1-10B HB54A2569F1-A75B HB54A 256MB, 512MB Registered DDR SDRAM DIMM
 Elpida Memory
KBE00S003M 1Gb NAND*2 256Mb Mobile SDRAM*2
 SAMSUNG SEMICONDUCTOR CO. LTD.
HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- 256MB (32Mx72) PC1600 1-bank
512MB (64Mx72) PC1600 1-bank
512MB (64Mx72) PC2100 1-bank
1GB (128Mx72) PC1600 2-bank
1GB (128Mx72) PC2100 2-bank GB的（128Mx72）PC2100 2银行
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
 Infineon Technologies AG
MT48H32M16LFCM-8L 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
 Micron Technology
MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
 Micron Technology
W3EG7264S-AD4 512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
 Optrex America, Inc.
 
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